(Solved): 2. Technology updatabing an nMOS transistor at room temperature et of I-V characteristics for an d ...

2. Technology updatabing an nMOS transistor at room temperature et of I-V characteristics for an different measurement setup shown in Table 1. Find (1) The threshold voltage VTo. 2) The electron mobility. (3) Body effect coefficient gamma. iume: \( \mathrm{W} / \mathrm{L}=1^{\sim}-274 \mathrm{~A}^{0} \cdot\left|2 \emptyset_{F}\right|=0.64 \mathrm{~V} \) You may use following expressions: \[ \gamma=\frac{V_{\tau}\left(V_{s s}\right)-V_{T 0}}{\sqrt{\left|2 \phi_{F}\right|+V_{s s}}-\sqrt{\left|2 \phi_{F}\right|}} \]