a) A Si MOSFET made on a p-substrate has
N_(A)=8\times 10^(14)cm^(-3)
, the source and drain are each doped to
N_(D)=6\times 10^(19)cm^(-3)
. Calculate the
V_(DS)
at which punchthrough would occur. The physical source to drain length of the MOSFET is given to be
L=4\mu m
. Assume the
V_(T)=1.0V
and the
V_(G)=0
.

Question

a) A Si MOSFET made on a p-substrate has

N_(A)=8\times 10^(14)cm^(-3)

, the source and drain are each doped to

N_(D)=6\times 10^(19)cm^(-3)

. Calculate the

V_(DS)

at which punchthrough would occur. The physical source to drain length of the MOSFET is given to be

L=4\mu m

. Assume the

V_(T)=1.0V

and the

V_(G)=0

.

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(Solved): a) A Si MOSFET made on a p-substrate has N_(A)=8\times 10^(14)cm^(-3), the source and drain are each ...