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(Solved): A Si MOSFET has the following parameters: n+ poly gate, oxide thickness d=80, Nd=1017 cm-3, and Qi ...
A Si MOSFET has the following parameters: n+ poly gate, oxide thickness d=80Å, Nd=1017 cm-3, and Qi=5x1010 cm-2. (a) What is the threshold voltage (VT) of this MOSFET? Is this enhancement or depletion mode device? (b) What type of implant and dose are required to achieve VT=0?
A Si MOSFET has the following parameters: n+ poly gate, oxide thickness
d=80\angstrom ,N_(d)=10^(17)cm^(-3), and Q_(i)=5\times 10^(10)cm^(-2).
(a) What is the threshold voltage (V_(T)) of this MOSFET? Is this enhancement
or depletion mode device?
(b) What type of implant and dose are required to achieve V_(T)=0 ?