(Solved): Assume our usual nMOS model where: Ohmic region ID=kVDS(VGSVTH) when VDS<VGS ...

Assume our usual nMOS model where: Ohmic region $I_D=k{V}_{DS}\left(V_{GS}?V_{TH}\right)$ when $V_{DS}<V_{GS}?V_{TH}$ Active region $\begin{array}{l}{I}_D=k{\left(V_{GS}?V_{TH}\right)}^2\text{ when }\\ V_{DS}?V_{GS}?V_{TH}\end{array}$ Consider the following circuit and the family of IV characteristic curves. You are given that $V_{TH}=2\mathrm{V},V_{DD}=6\mathrm{V}$, and $R_D=400?$. Use the $I_D?V_{DS}$ characteristics to find the transitor parameter $k$ and the value of $V_{GS}$ that produces $V_{DS}=0.86\mathrm{V}$. $k=$ $V_{GS}=$