(Solved): e) What is the room-temperature diffusion coefficient of electrons in GaAs? i. 3.521017cm2/s ...

e) What is the room-temperature diffusion coefficient of electrons in GaAs? i. $3.52\times 10^{?17}{\mathrm{cm}}^2/\sec$; ii. $33.7{\mathrm{cm}}^2/\sec$; iii. $220{\mathrm{cm}}^2/\sec$; iv. $1.38\times 10^{21}{\mathrm{cm}}^2/\sec$ f) The current-voltage characteristic of a PN junction in forward bias can be approximated as: $I=I_S?e^{(q?V/kT)}$. If $I_{\mathrm{s}}=10^{?11}\mathrm{A}$, estimate the small-signal resistance of the junction (in $?$ ) at a bias of $+0.4\mathrm{V}$ and a temperature of $300\mathrm{K}$. i. $3.15\times 10^{?22}$; ii. 0.00197 ; iii. 508 ; iv. 7849 g) A merchant semiconductor foundry that solely manufactures ICs for outside customers is described as: i. Fabless; ii. Integrated Device Manufacturer; iii. Design House; iv. Pure play h) An ideal N-channel enhancement type MOSFET is to be realised on bulk Ptype Silicon with a doping of $1.11\times 10^{16}/{\mathrm{cm}}^3$. What is the total energy bandbending which occurs at the surface of the semiconductor at the onset of strong inversion? i. $5.6\times 10^{?20}\mathrm{eV}$; ii. $1.12\times 10^{?19}\mathrm{eV}$; iii. $0.35\mathrm{eV}$; iv. $0.70\mathrm{eV}$