(Solved): If a handwritten solution, I'll give you a quick thumbs-up. P3. Consider an n-Si with a resistivity ...

P3. Consider an $n$-Si with a resistivity of $0.1??\mathrm{cm}$. In a certain region of this sample, there is an electric field of $1,000\mathrm{V}/\mathrm{cm}$. Estimate the electron and hole drift velocities and the individual (electron and hole) drift current densities in that region at $300\mathrm{K}$. Please use the below two figures for the estimation of necessary parameters. Assume the charge $q$ is $1.6\times 10^{?19}\mathrm{C},n_i$ at $300\mathrm{K}$ is $1.08\times 10^{10}{\mathrm{cm}}^{?3}$, and Boltzmann's constant $\mathrm{k}=8.62\times 10^{?5}\mathrm{eV}/\mathrm{K}$ Figure P3-1. Resistivity of $n$ - and p-type Si as a function of doping concentration at $300\mathrm{K}$ Figure P3-2. Minority and majority carrier electron and hole concentration in Si at 300K. Continuous lines refer to minority carriers and discontinuous lines refer to majority carriers.