(Solved): The ID vs. VDS curve of a certain nMOS transistor (with VOSVTA=2V ) is the pieceni ...

The $I_D$ vs. $V_{DS}$ curve of a certain nMOS transistor (with $V_{OS}?V_{TA}=2\mathrm{V}$ ) is the piecenise-linear confuection of $I_D=k{V}_{DS}\left(V_{CS}?V_{TH}\right)$ and $I_D=k{\left(V_{CS}?V_{TH}\right)}^2$ platted atove as each of two dotted tines, Note that these dotted lines extend these equations into regions in which they are not valid The transestor is foaded with $R_D=400?$ and $V_{DD}=12V$. This losd line has been plotted uning a solid black line. Recognize that $I_D=\min \{\left(k{V}_{DS}\left(V_{GS}?V_{TW}\right),k{\left(V_{GS}?V_{TW}\right)}^2\right)$, in woids the load loe will intersect both dashed lines but the intersection point with the lowest drain current, $I_D$. is the correct opetating point. Whyt is that operating point, $\left(V_{DS},I_D\right)$ ? Comment Altemstely, the region in which the operating point of MOSFE, exercise resides factive vi Ohmid can often be first determined by locating the graphical intercept points, You can then find ant accurate solution by applying the region-specific equation far the niecentse- linear IV chastacteritic of the MOSFET: $\begin{array}{l}{V}_{DS}=\\ J_D=\end{array}$