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Use this information to answer Question 12-16:
(1)/(1) point
A silicon pn junction (step junction) has doping densities of N_(A)=1\times 10^(16)cm^(-3) on the p-side and
N_(D)=2\times 10^(16)cm^(-3) on the n-side. Carrier lifetimes are given as \tau _(n)=10^(-6)s and \tau _(p)=10^(-8)s. Assume
long diode, i.e. long quasi-neutral regions.
Calculate the built-in voltage in unit of V.
Answers within 5% error will be considered correct.
0.744
Correct
Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n_(p), at the
edge of the depletion region on the p -side, x=-x_(p).
Give your answer in unit of cm^(-3). Answers within 5% error will be considered correct.
4.5 e +8
(*) Incorrect
Under a forward bias of 0.6 V , calculate the minority carrier concentration, p_(n), at the edge of the depletion
region on the n -side, x=x_(n).
Give your answer in unit of cm^(-3). Answers within 5% error will be considered correct.
922748
I need the asnwer and solution for number 13 and 14 pls tysm
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